AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7726, Issue , 2010, Pages

  Malinowski, P E ^a,b   Duboz, J Y ^c   John, J ^a   Sturdevant, C ^a   Das, J ^a   Derluyn, J ^a   Germain, M ^a   De Moor, P ^a   Minoglou, K ^a   Semond, F ^c   Frayssinet, E ^c   Hochedez, J F ^d   Giordanengo, B ^d   Van Hoof, C ^a,b   Mertens, R ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c CRHEA CNRS   (France)

^d ROYAL OBSERVATORY OF BELGIUM   (Belgium)

Author keywords

AlGaN; backside illumination; EUV; MSM; photodetector; Solar Orbiter; spectral responsivity; ultraviolet

Indexed keywords

ALGAN; BACKSIDE ILLUMINATION; MSM PHOTODETECTOR; SOLAR ORBITERS; SPECTRAL RESPONSIVITY;

ALUMINUM GALLIUM NITRIDE; CRYSTAL GROWTH; DETECTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTOELECTRONIC DEVICES; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

PHOTODETECTORS;

EID: 77953757724     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.853782     Document Type: Conference Paper

References (13)

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