Characterization of Mg0.20Zn0.80O metal-semiconductor-metal photodetectors

Materials Science and Engineering: B

Volumn 175, Issue 1, 2010, Pages 41-43

  Jiang, Dayong ^a   Zhang, Xiyan ^a   Liu, Quansheng ^a   Bai, Zhaohui ^a   Lu, Liping ^a   Wang, Xiaochun ^a   Mi, Xiaoyun ^a   Wang, Nengli ^a   Shen, Dezhen ^b  

^a CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Dark current; MSM; Photodetector; Responsivity

Indexed keywords

ELECTRODES; MAGNESIUM ALLOYS; MAGNETRON SPUTTERING; METALS; PHOTONS; SEMICONDUCTOR ALLOYS; SUBSTRATES; ZINC ALLOYS;

DEPLETION REGION; ELECTRODE SPACING; INTERDIGITAL; METAL CONTACTS; METAL SEMICONDUCTOR METAL PHOTODETECTOR; METAL-SEMICONDUCTOR-METAL; PROPERTY; QUARTZ SUBSTRATE; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RESPONSIVITY;

PHOTODETECTORS;

EID: 77956962414     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2010.06.017     Document Type: Article

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