SAW devices manufactured on GaN/Si for frequencies beyond 5 GHz

IEEE Electron Device Letters

Volumn 31, Issue 12, 2010, Pages 1398-1400

  Müller, Alexandru ^a   Neculoiu, Dan ^b   Konstantinidis, George ^c   Deligeorgis, George ^d   Dinescu, Adrian ^a   Stavrinidis, Antonis ^c   Cismaru, Alina ^a   Dragoman, Mircea ^a   Stefanescu, Alexandra ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^c INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^d LAAS CNRS   (France)

Author keywords

E beam nanolithography; interdigitated transducers (IDTs); surface acoustic wave (SAW)

Indexed keywords

E-BEAM NANOLITHOGRAPHY; GAN LAYERS; GHZ FREQUENCIES; INTER-DIGITATED TRANSDUCERS; METALLIZATIONS; ON-WAFER MEASUREMENTS; S -PARAMETERS; SAW DEVICE; SAW STRUCTURE; SURFACE ACOUSTIC WAVE (SAW); SURFACE ACOUSTIC WAVE DEVICE;

ACOUSTIC SURFACE WAVE DEVICES; ACOUSTIC TRANSDUCERS; ACOUSTICS; ACOUSTOELECTRIC EFFECTS; FREQUENCY RESPONSE; GALLIUM NITRIDE; NANOLITHOGRAPHY;

ACOUSTIC WAVES;

EID: 78649398376     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2078484     Document Type: Article

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