Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD

Microelectronics Journal

Volumn 39, Issue 9, 2008, Pages 1108-1111

  Luo, Weijun ^a   Wang, Xiaoliang ^a   Xiao, Hongling ^a   Wang, Cuimei ^a   Ran, Junxue ^a   Guo, Lunchun ^a   Li, Jianping ^a   Liu, Hongxin ^a   Chen, Yanling ^a   Yang, Fuhua ^a   Li, Jinmin ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

AlGaN GaN; High electron mobility transistor (HEMT); Si (1 1 1)

Indexed keywords

CURRENT DENSITY; DRAIN CURRENT; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; ION BEAM ASSISTED DEPOSITION; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MOLECULAR BEAM EPITAXY; OPTICAL DESIGN; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; SEMICONDUCTING GALLIUM; SILICON; SUBSTRATES; SURFACE ROUGHNESS;

ALGAN/GAN; ALGAN/GAN HEMT; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTOR; ALN LAYERS; CRACK-FREE; GA TE LENGTHS; GATE VOLTAGES; GATE WIDTHS; GROWTH OF GAN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); LOW TEMPERATURES; MAXIMUM DRAIN CURRENT DENSITY; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; REVERSE GATE; SI (1 1 1); TENSION STRESSES;

FULL WIDTH AT HALF MAXIMUM;

EID: 48849098757     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.01.083     Document Type: Article

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