SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 409, Issue 1, 2002, Pages 15-22

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition

(6) Feng, Z C a Zhang, X b Chua, S J b,c Yang, T R d Deng, J C b Xu, G e

a Hitron Associates Inc (United States)

b NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING (Singapore)

d NATIONAL TAIWAN NORMAL UNIVERSITY (Taiwan)

e MCMASTER UNIVERSITY (Canada)

Author keywords

GaN; MOCVD; Optical and structural properties

Indexed keywords

DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; GRAIN SIZE AND SHAPE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION;

ULTRATHIN FILMS;

EID: 0037156054 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(02)00096-2 Document Type: Conference Paper

Times cited : (22)

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