SCOPUS 정보 검색 플랫폼

Volumn 314, Issue 1, 2011, Pages 252-257

Intersubband transition at 1.55 μm in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770 °C

(5) Yang, Jung Seung a Sodabanlu, Hassanet a Sugiyama, Masakazu a Nakano, Yoshiaki a,b Shimogaki, Yukihiro a

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

A1. MOVPE; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds; B2. Semiconducting gallium compounds

Indexed keywords

B1. NITRIDES; B2. SEMICONDUCTING ALUMINUM COMPOUNDS; B2. SEMICONDUCTING GALLIUM COMPOUNDS; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE;

ALUMINUM; CARRIER CONCENTRATION; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; ORGANOMETALLICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 78651091808 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.034 Document Type: Article

Times cited : (4)

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