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Applied Physics Letters

Volumn 96, Issue 25, 2010, Pages

Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors

(7) Lim, T a Aidam, R a Kirste, L a Waltereit, P a Quay, R a Muller S a Ambacher, O a

a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; COMPOSITIONAL VARIATION; HETEROSTRUCTURES; INALGAN; LARGE CURRENT DENSITY; LATTICE-MATCHED; LAYER SEQUENCE; MOLE FRACTION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUATERNARY BARRIERS; SHEET ELECTRON DENSITY;

CRYSTAL GROWTH; ELECTRON MOBILITY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954041519 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3456561 Document Type: Article

Times cited : (34)

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