Design and preparation of AlN/GaN quantum wells for quantum cascade laser applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 8, 2005, Pages 5918-5922

  Ishida, Akihiro ^a,b   Matsue, Kazuma ^a,b   Inoue, Yoku ^a,b   Fujiyasu, Hiroshi ^a,b   Ko, Hang Ju ^b   Setiawan, Agus ^b   Kim, Jung Jin ^b   Makino, Hisao ^b   Yao, Takafumi ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Band structure; Cascade, midinfrared; Nitride; Quantum well; TEM; X ray

Indexed keywords

ALUMINUM COMPOUNDS; BAND STRUCTURE; GALLIUM NITRIDE; LASERS; NITRIDES; POLARIZATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

BUFFER LAYERS; CASCADE, MIDINFRARED; X-RAY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 31544451823     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5918     Document Type: Article

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