Resonance and current instabilities in AlN/GaN resonant tunnelling diodes

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 752-755

  Belyaev, A E ^a,b   Makarovsky, O ^a   Walker, D J ^a   Eaves, L ^a   Foxon, C T ^a   Novikov, S V ^a   Zhao, L X ^a   Dykeman, R I ^a   Danylyuk, S V ^c   Vitusevich, S A ^c   Kappers, M J ^d   Barnard, J S ^d   Humphreys, C J ^d  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

GaN; III V semiconductors; Resonant tunnelling structures

Indexed keywords

ALUMINUM NITRIDE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON DIFFRACTION; ELECTRON TRAPS; ELECTRON TUNNELING; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; RESONANCE; RESONANT TUNNELING; TRANSMISSION ELECTRON MICROSCOPY;

GAN; III-V SEMICONDUCTORS; RESONANT TUNNELING DIODES (RTD);

GALLIUM NITRIDE;

EID: 12144289733     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.119     Document Type: Conference Paper

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