Designs for λ= 1.55 μm GaN-based intersubband laser active region

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 A, 2004, Pages 7444-7447

  Jovanović, Vladimir D ^a   Ikonić, Zoran ^a   Indjin, Dragan ^a   Harrison, Paul ^a   Soref, Richard A ^b  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

GaN; Intersubband laser; Near infrared

Indexed keywords

OPTICAL COMMUNICATION; OPTICAL SWITCHES; OPTICAL WAVEGUIDES; PHONONS; RESONANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ENERGY SEPARATION; INTERSUBBAND LASER; NEAR-INFRARED; OPTICAL PHONON RESONANCE;

GALLIUM NITRIDE;

EID: 11144223546     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7444     Document Type: Article

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