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Volumn 50, Issue 4, 2011, Pages 411-418

A general solution to the Schrödinger-Poisson equation for a charged hard wall: Application to potential profile of an AlN/GaN barrier structure

(1) Berland, Kristian a

a CHALMERS UNIVERSITY OF TECHNOLOGY (Sweden)

Author keywords

AlN GaN heterostructures; Band bending; Interfaces; Schr dinger Poisson equation; Surface states; Two dimensional electron gas

Indexed keywords

ALN; ANALYTICAL EXPRESSIONS; ASYMPTOTIC BOUNDARY CONDITIONS; BANDBENDING; BARRIER STRUCTURES; EXACT SOLUTION; GENERAL SOLUTIONS; HARD WALLS; POTENTIAL PROFILES; SHEET CHARGE DENSITY; SURFACE STATES;

GROUND STATE; HETEROJUNCTIONS; INTERFACES (MATERIALS); TWO DIMENSIONAL ELECTRON GAS;

POISSON EQUATION;

EID: 80052848692 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2011.08.003 Document Type: Article

Times cited : (6)

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