Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 2 B, 2004, Pages

  Tu, Ru Chin ^a   Tun, Chun Ju ^b   Chuo, Chang Cheng ^a   Lee, Bing Chi ^c   Tsai, Ching En ^a   Wang, Te Chung ^a   Chi, Jim ^a   Lee, Chien Ping ^c   Chi, Gou Chung ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Atomic force microscopy; Density; InGaN; Photoluminescence; Quantum dot; SiNx

Indexed keywords

ATOMIC FORCE MICROSCOPY; DENSITY (OPTICAL); LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SILICON NITRIDE;

CARRIER CONFINEMENT; CARRIER LOCALIZATION; INGAN; ROOM TEMPERATURE (RT);

SEMICONDUCTOR QUANTUM DOTS;

EID: 2142652219     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l264     Document Type: Article

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