THz generation from InN films due to destructive interference between optical rectification and photocurrent surge

Semiconductor Science and Technology

Volumn 25, Issue 1, 2010, Pages

  Xu, Guibao ^a   Ding, Yujie J ^a   Zhao, Hongping ^a   Liu, Guangyu ^a   Jamil, Muhammad ^a   Tansu, Nelson ^a   Zotova, Ioulia B ^b   Stutz, Charles E ^c   Diggs, Darnell E ^c   Fernelius, Nils ^c   Hopkins, F Ken ^c   Gallinat, Chad S ^d   Koblmüller, Gregor ^d   Speck, James S ^d  

^a Lehigh University   (United States)

^b ARKLIGHT   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESTRUCTIVE INTERFERENCE; INCIDENT ANGLES; INN FILMS; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL RECTIFICATIONS; OUTPUT FREQUENCY; OUTPUT POWER; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PUMP POLARIZATION; SUBPICOSECOND; THZ GENERATION;

CHEMICAL BEAM EPITAXY; CRYSTAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; ORGANIC CHEMICALS; ORGANOMETALLICS; PLASMA DEPOSITION; POLARIZATION; PULSED LASER APPLICATIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 75649134548     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/1/015004     Document Type: Article

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