Fabrication of sub-100 nm patterns in SiO2 templates by electron-beam lithography for the growth of periodic III-V semiconductor nanostructures

Nanotechnology

Volumn 17, Issue 15, 2006, Pages 3903-3908

  Chen, A ^a   Chua, S J ^a,b   Chen, P ^b   Chen, X Y ^b   Jian, L K ^c  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; ELECTRON BEAM LITHOGRAPHY; NANOSTRUCTURED MATERIALS; POLYMETHYL METHACRYLATES; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS;

HEXAGONAL HOLE; HIGH OPTICAL QUALITY; PERIODIC PATTERNS; SEMICONDUCTOR NANOSTRUCTURES;

SILICA;

EID: 33748899884     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/15/048     Document Type: Article

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