Structure and 1/f noise of boron doped polymorphous silicon films

Nanotechnology

Volumn 19, Issue 8, 2008, Pages

  Li, S B ^a   Wu, Z M ^a   Jiang, Y D ^a   Li, W ^a   Liao, N M ^a   Yu, J S ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYMORPHISM; RAMAN SPECTROSCOPY; SILICON; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; VOLUME FRACTION;

POLYMORPHOUS SILICON FILMS; TAUC-LORENTZ MODEL;

BORON;

BORON; NANOMATERIAL; SILICON;

ANALYTIC METHOD; ARTICLE; CHEMICAL PROCEDURES; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON; ELLIPSOMETRY; EVAPORATION; FILM; INFRARED SPECTROSCOPY; NOISE; PARTICLE SIZE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRIORITY JOURNAL; SEMICONDUCTOR; TAUC LORENTZ MODEL;

EID: 38949094200     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/8/085706     Document Type: Article

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