Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown by metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2320-2325

  Ee, Yik Khoon ^a   Zhao, Hongping ^a   Arif, Ronald A ^a   Jamil, Muhammad ^a   Tansu, Nelson ^a  

^a Lehigh University   (United States)

Author keywords

A1. Low dimensional structures; A1. Nanostructures; A3. Metalorganic chemicalvapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURES; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

GREEN EMISSION; LOW-DIMENSIONAL STRUCTURES; PEAK PHOTOLUMINESCENCE (PL) WAVELENGTHS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 41449111600     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.022     Document Type: Article

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