Atom devices based on single dopants in silicon nanostructures

Nanoscale Research Letters

Volumn 6, Issue , 2011, Pages 1-9

  Moraru, Daniel ^a   Udhiarto, Arief ^a   Anwar, Miftahul ^a   Nowak, Roland ^a,b   Jablonski, Ryszard ^b   Hamid, Earfan ^a   Tarido, Juli Cha ^a   Mizuno, Takeshi ^a   Tabe, Michiharu ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Double donor systems; Kelvin probe force microscopy; Multiple donor systems; Photon; Silicon on insulator field effect transistor; Single dopant electronics; Single electron tunneling

Indexed keywords

DOPANT ATOMS; FUNDAMENTAL STRUCTURES; GATE LENGTH; KELVIN PROBE FORCE MICROSCOPY; NEW DEVICES; SILICON NANOSTRUCTURES; SILICON ON INSULATOR; SILICON-ON-INSULATOR MOSFETS; SINGLE ELECTRON TUNNELING; SINGLE-ELECTRON TURNSTILE; TECHNOLOGICAL TRENDS; TRANSPORT MECHANISM;

ATOMS; CRYSTAL ATOMIC STRUCTURE; DOPING (ADDITIVES); ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; PHOTONIC DEVICES; PHOTONS; PROBES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

SINGLE ELECTRON TRANSISTORS;

EID: 83655215393     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276x-6-479     Document Type: Review

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