Controlled shallow single-ion implantation in silicon using an active substrate for sub- 20-keV ions

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Jamieson, D N ^a   Yang, C ^a   Hopf, T ^a   Hearne, S M ^a   Pakes, C I ^a   Prawer, S ^a   Mitic, M ^b   Gauja, E ^b   Andresen, S E ^b   Hudson, F E ^b   Dzurak, A S ^b   Clark, R G ^b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ION BEAMS; ION IMPLANTATION; IONIZATION; MICROSCOPES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

NANOSCALE MASKS; SILICON SUBSTRATES; SINGLE-ION CONTROL; SURFACE OXIDES;

SILICON;

EID: 20944433630     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1925320     Document Type: Article

References (26)

1. B. E. Kane, Nature (London) 393, 133 (1998).
2. R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roychowdhury, T. Mor, and D. DiVincenzo, Phys. Rev. A 62, 012306 (2000).
3. L. C. L. Hollenberg, A. S. Dzurak, C. Wellard, A. R. Hamilton, D. J. Reilly, G. J. Milburn, and R. G. Clark, Phys. Rev. B 69, 113301 (2004).
4. International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, 2003), p. 21.
5. International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, 2003), p. 22.
6. J. L. O'Brien, S. R. Schofield, M. Y. Simmons, R. G. Clark, A. S. Dzurak, N. J. Curson, B. E. Kane, N. S. McAlpine, M. E. Hawley, and G. W. Brown, Phys. Rev. B 64, 161401 (2001).
7. T. Shinada, H. Loyama, C. Hinoshita, K. Imamura, and I. Ohdomari, Jpn. J. Appl. Phys., Part 2 41, L287 (2002).
8. T. Shinada, A. Ishikawa, C. Hinoshita, M. Koh, and I. Ohdomari, Appl. Surf. Sci. 162-163, 499 (2000).
9. T. Shinada, A. Ishikawa, C. Hinoshita, M. Koh, and I. Ohdomari, Jpn. J. Appl. Phys., Part 2 39, L265 (2000).
10. T. Schenkel, A. Persaud, S. J. Park, J. Nilsson, J. Bokor, J. A. Liddle, R. Keller, D. H. Schneider, D. W. Cheng, and D. E. Humphries, J. Appl. Phys. 94, 7017 (2003).
11. D. N. Jamieson, S. Prawer, I. Andrienko, D. A. Brett, and V. Millar, Nucl. Instrum. Methods Phys. Res. B 175-177, 744 (2001).
12. C. Yang, D. N. Jamieson, S. M. Hearne, E. Gauja, and A. Dzurak, Nucl. Instrum. Methods Phys. Res. B 190, 212 (2002).
13. V. Millar, C. I. Pakes, A. Cimmino, D. Brett, D. N. Jamieson, S. Prawer, C. Yang, B. Rout, R. P. McKinnon, A. S. Dzurak, and R. G. Clark, Smart Mater. Struct. 11, 686 (2002).
14. R. G. Clark, P. C. Hammel, A. S. Dzurak, A. R. Hamilton, L. C. L. Hollenberg, D. N. Jamieson, and C. I. Pakes, Los Alamos Sci. 27, 284 (2002).
15. M. B. H. Breese, D. N. Jamieson, and P. J. C. King, Materials Analysis with a Nuclear Microprobe (Wiley and Sons, New York, 1996).
16. K. C. Hsieh, Nucl. Instrum. Methods 138, 677 (1976).
17. C. C. Curtis and K. C. Hsieh, Rev. Sci. Instrum. 48, 252 (1977).
18. G. Bertolini and A. Coche, Semiconductor Detectors (North-Holland, Amsterdam, 1968).
19. E. L. Haines and A. B. Whitehead, Rev. Sci. Instrum. 37, 190 (1966).
20. TOPSIL data sheet, Topsil Semiconductor Materials AS, http:www.topsil.com
21. C. Yang, D. N. Jamieson, S. M. Hearne, C. I. Pakes, B. Rout, E. Gauja, A. S. Dzurak, and R. G. Clark, Nucl. Instrum. Methods Phys. Res. B 190, 212 (2002).
22. J. F. Ziegler, J. P. Biersack, and U. Littmark, SRIM-The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
23. R. N. Hamm, J. E. Turner, H. A. Wright, and R. H. Ritchie, IEEE Trans. Nucl. Sci. 26, 4892 (1979).
24. C. I. Pakes, D. P. George, D. N. Jamieson, C. Yang, A. S. Dzurak, E. Gauja, and R. G. Clark, Nanotechnology 14, 157 (2003).
25. TCAD-Technology Computer Aided Design (Integrated Systems Engineering AG, Zurich, Switzerland); http:www.ise.com
26. MOXTEK, Inc., http:www.moxtek.com