Single-electron transfer by inter-dopant coupling tuning in doped nanowire silicon-on-insulator field-effect transistors

Applied Physics Express

Volumn 2, Issue 7, 2009, Pages

  Moraru, Daniel ^a   Ligowski, Maciej ^a   Yokoi, Kiyohito ^a   Mizuno, Takeshi ^a   Tabe, Michiharu ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACK GATES; CHARGE STABILITY; COUPLING TUNING; ELECTRON TRANSPORT; INTERDOT COUPLING; QUANTUM DOT; SILICON ON INSULATOR; SINGLE ELECTRON TRANSFER; SINGLE-ELECTRON TURNSTILE;

DOPING (ADDITIVES); ELECTRON TRANSITIONS; MICROSENSORS; NANOWIRES; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM DOTS;

FIELD EFFECT TRANSISTORS;

EID: 68249097025     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.071201     Document Type: Article

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