Detection of single photons using a field-effect transistor gated by a layer of quantum dots

Applied Physics Letters

Volumn 76, Issue 25, 2000, Pages 3673-3675

  Shields, A J ^a   O'Sullivan, M P ^a,b   Farrer, I ^b   Ritchie, D A ^b   Hogg, R A ^a   Leadbeater, M L ^a   Norman, C E ^a   Pepper, M ^a,b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000447782     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126745     Document Type: Article

References (13)

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13. The fact that the error seems to be overestimated may be explained by the noise from the LED being sub-Poissonian; see, for example, M. Kobayashi, M. Kohno, Y. Kadoya, M. Yamanishi, J. Abe, and T. Hirano, Appl. Phys. Lett. 72, 284 (1998).