Single-photon detection by Si single-electron FETs

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 3, 2011, Pages 646-651

  Tabe, Michiharu ^a   Udhiarto, Arief ^a   Moraru, Daniel ^a   Mizuno, Takeshi ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Coulomb blockade; quantum dot; single dopant; single photon detection

Indexed keywords

CHANNEL REGION; DIRECT OBSERVATION; DOPED CHANNELS; KELVIN PROBE FORCE MICROSCOPY; LOW TEMPERATURES; NANO SCALE; P DONORS; PHOTON DETECTION; QUANTUM DOT; RANDOM TELEGRAPH SIGNALS; SELECTIVE OXIDATION; SINGLE DOPANT; SINGLE ELECTRON; SINGLE-ELECTRON TRANSPORT; SINGLE-PHOTON DETECTION; SOI-MOSFETS; THIN SOI;

COULOMB BLOCKADE; ELECTRONS; MESFET DEVICES; MOSFET DEVICES; PARTICLE BEAMS; PHOSPHORUS; PHOTODETECTORS; PHOTONS; QUANTUM CHEMISTRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TELEGRAPH;

DOPING (ADDITIVES);

EID: 79952522826     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000385     Document Type: Article

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