Enhancing semiconductor device performance using ordered dopant arrays

Nature

Volumn 437, Issue 7062, 2005, Pages 1128-1131

  Shinada, Takahiro ^a   Okamoto, Shintaro ^a   Kobayashi, Takahiro ^a   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; ELECTRIC FIELDS; ELECTRIC PROPERTIES; ION IMPLANTATION; QUANTUM THEORY; SILICON; THRESHOLD VOLTAGE;

DOPANT ATOMS; DOPANT DISTRIBUTION; ELECTROSTATIC POTENTIAL; SOLID-STATE QUANTUM COMPUTERS;

SEMICONDUCTOR DEVICES;

PHYSICS;

ARTICLE; COMPUTER SYSTEM; ELECTRIC POTENTIAL; ELECTRICITY; PRIORITY JOURNAL; QUANTUM THEORY; SEMICONDUCTOR;

EID: 27144459867     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature04086     Document Type: Article

References (11)

1. Keyes, R. W. The effect of randomness in the distribution of impurity atoms on FET thresholds. Appl. Phys. 8, 251-259 (1975).
2. Mizuno, T., Okamura, J. & Toriumi, A. Experimental-study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET. IEEE Trans. Electron Devices 41, 2216-2221 (1994).
3. Wong, H. S. & Taur, Y. Discrete dopant distribution effects in nanometer-scale MOSFETs. Microelectron. Reliab. 38, 1447-1456 (1998).
4. Sano, N. & Tomizawa, M. Random dopant model for three-dimensional drift-diffusion simulations in metal-oxide-semiconductor field-effect- transistors. Appl. Phys. Lett. 79, 2267-2269 (2001).
5. Ebert, Ph., Jager, N. D., Urban, K. & Weber, E. R. Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces. J. Vac. Sci. Technol. B 22, 2018-2025 (2004).
6. Ohdomari, I. in Proc. 1st Int. Symp. Control of Semiconductor Interfaces (eds Ohdomari, I., Oshima, M. & Hiraki, A.) 223-240 (North-Holland, Amsterdam, 1994).
7. Matsukawa, T. et al. Development of single-ion implantation - Controllability of implanted ion number. Appl. Surf. Sci. 117/118, 677-683 (1997).
8. Shinada, T., Ishikawa, A., Hinoshita, C., Koh, M. & Ohdomari, I. Reduction of fluctuation in semiconductor conductivity by one-by-one ion implantation of dopant atoms. Jpn J. Appl. Phys. 39, L265-L268 (2000).
9. Shinada, T., Koyama, H., Hinoshita, C., Imamura, K. & Ohdomari, I. Improvement of focused ion-beam optics in single-ion implantation for higher aiming precision of one-by-one doping of impurity atoms into nano-scale semiconductor devices. Jpn. J. Appl. Phys. 41, L287-L290 (2002).
10. Kane, B. E. A silicon-based nuclear spin quantum computer. Nature 393, 133-137 (1998).
11. Sze, S. M. Physics of Semiconductor Devices: Physics and Technology 2nd edn (Wiley, New York, 2001).