Memory effects based on dopant atoms in nano-FETs

Advanced Materials Research

Volumn 222, Issue , 2011, Pages 122-125

  Moraru, Daniel ^a   Hamid, Erfan ^a   Tarido, Juli Cha ^a   Miki, Sakito ^a   Mizuno, Takeshi ^a   Tabe, Michiharu ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Dopant; Nanoscale FET; Silicon; Single electron charging

Indexed keywords

CHANNEL DIMENSION; CURRENT FLOWING; DEVICE OPERATIONS; DOPANT; DOPANT ATOMS; ELECTRON TRANSPORT; MEMORY EFFECTS; MEMORY OPERATIONS; NANO SCALE; NANOSCALE FET; NANOSCALE FIELD-EFFECT TRANSISTORS; NEW DEVICES; NEW PHYSICS; QUANTUM EFFECTS; SILICON NANODEVICES; SINGLE ELECTRON; SINGLE-ELECTRON CHARGING; SOURCE AND DRAINS;

ELECTRONS; MESFET DEVICES; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; QUANTUM ELECTRONICS;

DOPING (ADDITIVES);

EID: 79955840186     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.222.122     Document Type: Conference Paper

References (16)

1. B. E. Kane: Nature, Vol. 393 (1998), p. 133.
2. L. C. L. Hollenberg, A. S. Dzurak, C. Wellard, A. R. Hamilton, D. J. Reilly, G. J. Milburn, and R. G. Clark: Phys. Rev. B, Vol. 69 (2004), p. 113301.
3. H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans: Phys. Rev. Lett., Vol. 97 (2006), p. 206805.
4. G. P. Lansbergen, R. Rahman, C. J. Wellard, I. Woo, J. Caro, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge: Nature Physics, Vol. 4 (2008), p. 656.
5. Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi: Appl. Phys. Lett., Vol. 90 (2007), p. 102106.
6. M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno: Phys. Rev. Lett., Vol. 105 (2010), p. 016803.
7. M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, and M. Tabe: Appl. Phys. Lett., Vol. 93 (2008), p. 142101.
8. M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, and T. Mizuno: Thin Solid Films, Vol. 518 (2010), p. S38.
9. D. Moraru, Y. Ono, H. Inokawa, and M. Tabe: Phys. Rev. B, Vol. 76 (2007), p. 075332.
10. K. Yokoi, D. Moraru, M. Ligowski, and M. Tabe: Jpn. J. Appl. Phys., Vol. 48 (2009), p. 024503.
11. D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno, and M. Tabe: Appl. Phys. Express, Vol. 2 (2009), p. 071201.
12. K. Yokoi, D. Moraru, T. Mizuno, and M. Tabe: J. Appl. Phys., Vol. 108 (2010), p. 053710.
13. E. Hamid, D. Moraru, J. C. Tarido, S. Miki, T. Mizuno, and M. Tabe: Appl. Phys. Lett., Vol. 97 (2010), p. 262101.
14. G. J. Evans, H. Mizuta, and H. Ahmed: Jpn. J. Appl. Phys., Vol. 40 (2001), p. 5837.
15. D. V. Averin and K. K. Likharev: in Single charge tunneling, ed. H. Grabert and M. Devoret (Plenum, New York, 1992), p. 311.
16. M. J. Calderon, B. Koiller, and S. Das Sarma: Phys. Rev. B, Vol. 75 (2007), p. 125311.