Observation of discrete dopant potential and its application to Si single-electron devices

Thin Solid Films

Volumn 518, Issue 6 SUPPL. 1, 2010, Pages

  Tabe, Michiharu ^a   Moraru, Daniel ^a   Ligowski, Maciej ^a,b   Anwar, Miftahul ^a   Yokoi, Kiyohito ^a   Jablonski, Ryszard ^b   Mizuno, Takeshi ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

Kelvin probe force microscope; Quantum dots; Silicon on insulator; Single dopant potential; Single electron transfer

Indexed keywords

CHANNEL POTENTIAL; DOPANT DISTRIBUTION; HIGH SENSITIVITY; IONIZED DOPANTS; KELVIN PROBE FORCE MICROSCOPES; KELVIN PROBE FORCE MICROSCOPY; LOW TEMPERATURES; NANO SCALE; QUANTUM DOT; QUANTUM DOT ARRAYS; SILICON ON INSULATOR; SINGLE ELECTRON MEMORIES; SINGLE ELECTRON TRANSFER; SINGLE PHOTON DETECTION; SINGLE-ELECTRON DEVICES; SINGLE-ELECTRON TRANSPORT;

DOPING (ADDITIVES); ELECTRON DEVICES; ELECTRON TRANSITIONS; FIELD EFFECT TRANSISTORS; MICROSENSORS; OPTICAL WAVEGUIDES; PROBES; SEMICONDUCTOR QUANTUM DOTS;

SINGLE ELECTRON TRANSISTORS;

EID: 73649116724     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.051     Document Type: Article

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