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Volumn 105, Issue 1, 2010, Pages

Single-electron transport through single dopants in a dopant-rich environment

(7) Tabe, Michiharu a Moraru, Daniel a Ligowski, MacIej a,b Anwar, Miftahul a Jablonski, Ryszard b Ono, Yukinori c Mizuno, Takeshi a

a SHIZUOKA UNIVERSITY (Japan)

b WARSAW UNIVERSITY OF TECHNOLOGY (Poland)

c Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE VOLTAGES; INITIAL STAGES; KELVIN PROBE FORCE MICROSCOPY; LOW TEMPERATURES; PHOSPHORUS-DOPED; POTENTIAL CHANGE; POTENTIAL MAP; SINGLE ELECTRON; SINGLE-ELECTRON TRANSPORT; SOURCE-DRAIN CURRENT;

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; PHOSPHORUS;

DOPING (ADDITIVES);

EID: 77954252819 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.105.016803 Document Type: Article

Times cited : (102)

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