Single-electron charging in phosphorus donors in silicon observed by low-temperature Kelvin probe force microscope

Japanese Journal of Applied Physics

Volumn 50, Issue 8 PART 4, 2011, Pages

  Anwar, Miftahul ^a   Kawai, Yuya ^a   Moraru, Daniel ^a   Nowak, Roland ^a,b   Jablonski, Ryszard ^b   Mizuno, Takeshi ^a   Tabe, Michiharu ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BACKGATE VOLTAGE; ELECTRON CHARGING; ELECTRONIC POTENTIALS; KELVIN PROBE FORCE MICROSCOPES; KELVIN PROBE FORCE MICROSCOPY; LOW TEMPERATURES; PHOSPHORUS DONOR; PHOSPHORUS DONORS IN SILICON; PHOSPHORUS-DOPED; POTENTIAL PROFILES; POTENTIAL WELLS; SILICON ON INSULATOR; SINGLE-ELECTRON CHARGING; SINGLE-STEP;

FIELD EFFECT TRANSISTORS; PHOSPHORUS; PROBES; WELLS;

ELECTRONS;

EID: 80052019382     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.08LB10     Document Type: Conference Paper

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