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Volumn 5039 II, Issue , 2003, Pages 817-826
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Most feasible curing process for ArF resist in device integration aspect
a a a a a a a |
Author keywords
172nm; ArF; Lithography; VEMA; VUV
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Indexed keywords
ARGON;
CURING;
DRY ETCHING;
DYNAMIC RANDOM ACCESS STORAGE;
ELECTRON BEAM LITHOGRAPHY;
ELECTRON DEVICE MANUFACTURE;
INSPECTION;
MASKS;
SCANNING ELECTRON MICROSCOPY;
SILICON NITRIDE;
SILICON WAFERS;
THICKNESS CONTROL;
CRITICAL DIMENSION;
ELECTRON BEAM CURING;
PLASMA CURING;
THERMAL CURING;
ULTRAVIOLET CURING;
PHOTORESISTS;
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EID: 0141722783
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.485119 Document Type: Conference Paper |
Times cited : (8)
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References (8)
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