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Volumn 5039 II, Issue , 2003, Pages 817-826

Most feasible curing process for ArF resist in device integration aspect

Author keywords

172nm; ArF; Lithography; VEMA; VUV

Indexed keywords

ARGON; CURING; DRY ETCHING; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON BEAM LITHOGRAPHY; ELECTRON DEVICE MANUFACTURE; INSPECTION; MASKS; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; SILICON WAFERS; THICKNESS CONTROL;

EID: 0141722783     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485119     Document Type: Conference Paper
Times cited : (8)

References (8)
  • 7
    • 0035755027 scopus 로고    scopus 로고
    • Mechanistic studies on the CD degradation of 193nm resists during SEM inspection
    • T. Kudo, et al., "Mechanistic Studies on the CD Degradation of 193nm Resists during SEM Inspection," J. Photopolymer Sci. Technol. 14, pp.407-417, 2001.
    • (2001) J. Photopolymer Sci. Technol. , vol.14 , pp. 407-417
    • Kudo, T.1
  • 8
    • 0020497931 scopus 로고
    • Dry etch resistance of organic materials
    • G. Gokan, et al., "Dry Etch Resistance of Organic Materials," J. Electrochem. Soc.: Solid-state Sci Technol, 130, No. 1, pp. 143-146, 1983.
    • (1983) J. Electrochem. Soc.: Solid-state Sci Technol , vol.130 , Issue.1 , pp. 143-146
    • Gokan, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.