Ion implantation as insoluble treatment for resist stacking process

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Nakamura, Hiroko ^a   Shibata, Takeshi ^a   Rikimaru, Katsumi ^a   Ito, Sanae ^a   Tanaka, Satoshi ^a   Inoue, Soichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Double patterning; Ion implantation; Resist insoluble treatment; Resist stacking process

Indexed keywords

DISSOLUTION; ELECTROLYSIS; ELECTRON BEAM LITHOGRAPHY; ION BOMBARDMENT; ION IMPLANTATION; IONS; PHOTORESISTS;

ACCELERATION VOLTAGES; DOUBLE PATTERNING; ETCHING MASKS; IMPLANTED IONS; LAYER PATTERNS; PROJECTED RANGES; RESIST INSOLUBLE TREATMENT; RESIST PATTERNING; RESIST PATTERNS; RESIST STACKING PROCESS; RESIST THICKNESSES; STACKING PROCESSES;

OPTICAL CABLES;

EID: 57349165432     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.771811     Document Type: Conference Paper

References (14)

1. Lim, C., Kim, S., Hwang, Y., Choi, J., Ban, K., Cho, S., Jung, J., Kang, E., Lim, H., Kim, H. and Moon, S., "Positive and Negative Tone Double Patterning Lithography for 50nm Flash Memory", Proc. SPIE 6154, 615410 (2006).
2. Owe-Yang, D. C., Yu, S. S., Chang, C. Y., Ho, B. C., Lin, J. C. and Lin, B. J., "Double exposure for the contact layer of the 65-nm node", Proc. SPIE 5753, 171-180 (2005).
3. Vanleebhove, A. and Van Steenwinckel, D., "A litho-only approach to double patterning", Proc. SPIE 6520, 65202F (2007).
4. 3 4, 023005, (2005).
5. Chang, C., Yang, E, Wu, T. S., Yang, T. and Hsueh, C., "Low Proximity Contact Hole Formation by Using Double Exposure Technology (DET)", Proc. SPIE 5040, 1241-1246 (2003).
6. Ueda, K., Sudo, S., Shibata, K. and Mameno, K., "Surface modification of phtotoresist masks using ion implantation and its application to dry etching processes", Digest Papers of MicoProcess '96, 56-57 (1996).
7. Kishimura, S., Kimura, Y., Sakai, J., Tsujita, K. and Matsui, Y., "Dry etching resistance of resist base polymer and its improvement", Proc. SPIE 3049, 944-954 (1997).
8. Kim, H., Kang, Y., Lee, J., Chai, Y., Woo, S., Cho, H. and Han, W., "Most feasible curing process for ArF resist in device integration aspect" Proc. SPIE 5039, 817-826 (2003).
9. Padmanaban, M., ALemy, E., Dammel, R. R., Kim, W., Kudo, T., Lee, S., Mckenzie, D., Orsi, A., Rahman, D., Chen, W., Sadjadi, R. M., Livesay, W. and Ross, M., "E-Beam Curing Effects on the Etch and CD-SEM Stability of 193 nm Resists", Proc. SPIE 4690, 606-614 (2002).
10. Chun, J., Kim, H. E., Baenett, S. and Shih, J., "Novel Hardening Methods of DUV Chemically Amplified Photoresist by Ion Implantation and Its Application to New Organic ARC Material and Bilayer Process" Proc. SPIE 3678, 1364-1370 (1999).
11. Yamaguchi, A., Nakae, A. and Tsujita, K., "Ar Ion Implantation into Resist for Etching Resistance Improvement", Proc. SPIE 4345, 655-664 (2001).
12. Ishibashi, T., Ono, Y., Ymaguchi, A., Ogawa, S., Hanawa, T., Shinohara, M., Tadokoro, M., Yonekura, K., Mitarai, Y., Matusda, K., Hirori, H., Miyamoto, T. and Matsunobe, T., "Novel Spin-on Carbon Hard Mask with Hardening by Ion Implantation", J. Photopolym. Sci. Technol. 20, 365-372 (2007).
13. Ito, K., Tsurushima, T., Tanida, K., Odomari, I., [Ion Implantation], Shokodo, 25-66.
14. Ryssel, H. and Ruge, I., [Ion Implantation], John Wiley & Sons, 5-24 (1986).