Resist freezing process for double exposure lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Chen, Kuang Jung Rex ^a   Huang, Wu Song ^a   Li, Wai Kin ^a   Varanasi, P Rao ^a  

^a IBM RESEARCH   (United States)

Author keywords

Pitch splitting; Post develop bake; Resist on resist double exposure

Indexed keywords

DOUBLE EXPOSURE LITHOGRAPHIES; DOUBLE EXPOSURES; FORMULATION OPTIMIZATIONS; FREEZING PROCESSES; HIGHER TEMPERATURES; PITCH SPLITTING; POSITIVE RESISTS; POST DEVELOP BAKE; RESIST-ON-RESIST DOUBLE EXPOSURE; SOLVENT SOLUBILITIES; SWITCH CHARACTERISTICS;

PHOTOLITHOGRAPHY; POLYMERS; TURBULENT FLOW;

FREEZING;

EID: 51549089971     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772852     Document Type: Conference Paper

References (6)

1. Peters, L., "32 nm Marked by Litho, Transistor Changes," Semiconductor International, Jan. 1(2008).
2. Maenhoudt, M., "Double Patterning Process Options" SPIE Hot Topics in Advanced Lithography Webcast Series, SPIE TV, Oct. 23(2007).
3. Kye, J., "Double Patterning Challenge," SPIE Hot Topics in Advanced Lithography Webcast Series, SPIE TV, Oct. 23(2007).
4. Owe-Yang, D.C., Yu, S.S., Chen, H., Chang, C.Y., Ho, B., Lin, J., Burn J., "Double Exposure for the Contact layer of the 65-nm Node," Proc. SPIE 5753, 171(2005).
5. 1 Lithography," Proc. SPIE 5377, 255(2004).
6. 1 Contact Hole Formation by Double Line and Space Formation Method with Contact Hole Mask and Dipole Illumination," Jpn. J. Appl. Phys. 45, 5409-5417(2006).