Impact of HBr and Ar cure plasma treatments on 193nm photoresists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Bazin, Arnaud ^a   Pargon, Erwine ^b   Mellahoui, Xavier ^b   Perret, Damien ^c   Mortini, Bénédicte ^a   Joubert, Olivier ^b  

^a STMICROELECTRONICS   (France)

^b Joseph Fourier University   (France)

^c ROHM AND HAAS COMPANY   (United States)

Author keywords

ArF photoresist; Cure plasma treatments; DMA; Etch resistance; FTIR; Real time ellipsometry; XPS

Indexed keywords

ARGON; CHEMICAL MODIFICATION; CURING; DRYING; DYNAMIC MECHANICAL ANALYSIS; ELLIPSOMETRY; ESTERS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLASS TRANSITION; PHOTORESISTS; PLASMA APPLICATIONS; PLASMA ETCHING; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARACTERIZATION TECHNIQUES; DYNAMIC MECHANICAL ANALYSIS (DMA); ETCH RESISTANCE; FOURIER TRANSFORMED INFRARED SPECTROSCOPY; FTIR; PLASMA ETCHING PROCESS; PLASMA TREATMENT; REAL TIME;

BROMINE COMPOUNDS;

EID: 51549096561     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772573     Document Type: Conference Paper

References (12)

1. R. Kunz et al., Proc. SPIE, 2724, p365-376 (1996)
2. H. Gokan et al., J.Electrochem. Soc. 130, 143 (1983)
3. M. McCallum et al., Microelectronic Engineering 46 335-338 (1999)
4. P. Argitis et al., Microelectronic Engineering 41/42 335-338 (1998)
5. K. Patterson et al., Proc. SPIE, 3333, p425-437 (1998)
6. E. Gogolides et al., J. Vac Sci. Technol. B 21(1), Jan/Feb 2003
7. A. Ando et al., DPS, 2-04, (2005)
8. A.P Mahorowala et al., Proc SPIE, 5753, p380-389 (2005)
9. M.Kurihara et al., DPS, 1-02, (2004)
10. H. Kawahira et al., Proc SPIE, 6153, 19 (2006)
11. J. Y. Lee et al., Macromolecules, 21, 346-354 (1988)
12. N. Higashi et al., Langmuir, 10, 4651-4656 (1994)