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Journal of Applied Physics

Volumn 110, Issue 7, 2011, Pages

Effects of band-tails on the subthreshold characteristics of nanowire band-to-band tunneling transistors

(2) Khayer, M Abul a Lake, Roger K a

a University of California Riverside (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; CHANNEL CARRIERS; CHANNEL DEVICE; COHERENT TUNNELING; CURRENT RATIOS; CUT-OFF; DECAY CONSTANTS; DENSITY OF STATE; DRIVE CURRENTS; HIGH ELECTRIC FIELDS; INTERBAND; MINIMAL EFFECTS; ROOM TEMPERATURE; SHORT CHANNELS; SOURCE DOPING; SOURCE REGION; SUBTHRESHOLD CHARACTERISTICS; SUBTHRESHOLD SLOPE; SUPPLY VOLTAGES; TUNNEL FIELD EFFECT TRANSISTOR; VALENCE BAND EDGES;

ELECTRIC FIELD EFFECTS; NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 80055012197 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3642954 Document Type: Article

Times cited : (64)

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