Diameter dependent performance of high-speed, low-power InAs nanowire field-effect transistors

Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

  Khayer, M Abul ^a   Lake, Roger K ^a  

^a University of California Riverside   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; BALLISTIC TRANSPORTS; DENSITY OF STATE; DIAMETER DEPENDENT; ELECTRON EFFECTIVE MASS; ENERGY DELAY PRODUCT; GATE-DELAY TIME; HIGH-SPEED; INAS; INAS NANOWIRE FIELD-EFFECT TRANSISTORS; LARGE DIAMETER; LOW POWER; NUMERICAL RESULTS; OPTIMUM DESIGNS; PERFORMANCE METRICS; POWER-DELAY PRODUCTS; QUANTUM CAPACITANCE; SINGLE-MODED; TWO-BAND MODEL; ULTRA-LOW POWER;

BALLISTICS; MESFET DEVICES; NANOWIRES; NUMERICAL ANALYSIS; SEMICONDUCTING INDIUM;

FIELD EFFECT TRANSISTORS;

EID: 75649140219     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275502     Document Type: Article

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