Heterojunction vertical band-to-band tunneling transistors for steep subthreshold swing and high on current

IEEE Electron Device Letters

Volumn 32, Issue 5, 2011, Pages 689-691

  Ganapathi, Kartik ^a   Salahuddin, Sayeef ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ballistic quantum transport; band to band tunneling; heterojunction; steep subthreshold

Indexed keywords

BAND OFFSETS; BAND-TO-BAND TUNNELING; BARRIER HEIGHTS; ON CURRENTS; QUANTUM TRANSPORT; QUANTUM TRANSPORT SIMULATIONS; SUBTHRESHOLD; SUBTHRESHOLD SWING; TUNNELING FIELD-EFFECT TRANSISTORS;

BALLISTICS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; NONVOLATILE STORAGE; QUANTUM ELECTRONICS; WASTE DISPOSAL;

QUANTUM CHEMISTRY;

EID: 79955529740     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2112753     Document Type: Article

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