Fully-depleted Ge interband tunnel transistor: Modeling and junction formation

Solid-State Electronics

Volumn 53, Issue 1, 2009, Pages 30-35

  Zhang, Qin ^a   Sutar, Surajit ^a   Kosel, Thomas ^a   Seabaugh, Alan ^a  

^a University of Notre Dame   (United States)

Author keywords

Ge tunnel junction; Interband tunnel transistor; Low subthreshold swing; Rapid melt growth

Indexed keywords

ALUMINUM; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; FORMING; GERMANIUM; GROWTH (MATERIALS); PHASE DIAGRAMS; POINT DEFECTS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; TRANSISTORS; TUNNELS;

ANALYTIC EXPRESSIONS; DEVICE AREAS; GATE LENGTHS; GE SYSTEMS; GE TUNNEL JUNCTION; GROWTH METHODS; INTERBAND; INTERBAND TUNNEL TRANSISTOR; INTERBAND TUNNELS; JUNCTION FORMATIONS; LOW SUBTHRESHOLD SWING; MOS FETS; NMOSFET; NMOSFETS; POWER PERFORMANCES; RAPID MELT GROWTH; STATIC INVERTERS; SUB MICRONS; SUPPLY VOLTAGES; SYNOPSYS; TUNNEL CURRENTS; TUNNEL TRANSISTORS; VALLEY CURRENTS;

TUNNEL JUNCTIONS;

EID: 57449102336     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.010     Document Type: Article

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