Effect of uniaxial strain on the drain current of a heterojunction tunneling field-effect transistor

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 464-466

  Solomon, Paul M ^a   Lauer, I ^a   Majumdar, A ^a   Teherani, J T ^b   Luisier, M ^c   Cai, J ^a   Koester, S J ^d  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c PURDUE UNIVERSITY   (United States)

^d UNIVERSITY OF MINNESOTA   (United States)

Author keywords

Band to band tunneling; strain; stress; tunneling FET (TFET)

Indexed keywords

[110] DIRECTION; APPLIED STRAIN; BAND TO BAND TUNNELING; EFFECT OF STRAIN; ELECTRICAL CHARACTERISTIC; EXPERIMENTAL VALUES; P-TYPE SI; SIMULATION RESULT; TUNNELING CURRENT; TUNNELING FET (TFET); TUNNELING FIELD-EFFECT TRANSISTORS; UNI-AXIAL STRAINS;

DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GERMANIUM; HETEROJUNCTIONS; MESFET DEVICES;

TENSILE STRAIN;

EID: 79953037663     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2108993     Document Type: Article

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