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Volumn 95, Issue 7, 2009, Pages

Performance analysis of InP nanowire band-to-band tunneling field-effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND TO BAND TUNNELING; COLD CARRIERS; DRIVE CURRENTS; FIELD-EFFECT TRANSISTOR; HIGH-POWER ELECTRONIC DEVICES; HIGH-SPEED; INP; MATERIAL CHOICE; PERFORMANCE ANALYSIS; THEORETICAL INVESTIGATIONS; TUNNELING CURRENT; WAVE VECTOR;

EID: 69249192691     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3212892     Document Type: Article
Times cited : (9)

References (12)
  • 5
    • 39549093276 scopus 로고    scopus 로고
    • 0018-9219, 10.1109/JPROC.2007.911051
    • J. Appenzeller, Proc. IEEE 0018-9219 96, 201 (2008). 10.1109/JPROC.2007. 911051
    • (2008) Proc. IEEE , vol.96 , pp. 201
    • Appenzeller, J.1
  • 6
    • 0001929570 scopus 로고
    • 0096-8250, 10.1103/PhysRev.123.85
    • W. A. Harrison, Phys. Rev. 0096-8250 123, 85 (1961). 10.1103/PhysRev.123. 85
    • (1961) Phys. Rev. , vol.123 , pp. 85
    • Harrison, W.A.1
  • 7
    • 26244456092 scopus 로고    scopus 로고
    • Leakage and performance of zero-Schottky-barrier carbon nanotube transistors
    • DOI 10.1063/1.2060962, 064307
    • K. Alam and R. K. Lake, J. Appl. Phys. 0021-8979 98, 064307 (2005). 10.1063/1.2060962 (Pubitemid 41415355)
    • (2005) Journal of Applied Physics , vol.98 , Issue.6 , pp. 1-8
    • Alam, K.1    Lake, R.K.2
  • 10
    • 0000985744 scopus 로고    scopus 로고
    • 0163-1829, 10.1103/PhysRevB.54.8107
    • T. B. Boykin, Phys. Rev. B 0163-1829 54, 8107 (1996). 10.1103/PhysRevB.54.8107
    • (1996) Phys. Rev. B , vol.54 , pp. 8107
    • Boykin, T.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.