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Volumn 95, Issue 7, 2009, Pages
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Performance analysis of InP nanowire band-to-band tunneling field-effect transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
BAND GAPS;
BAND TO BAND TUNNELING;
COLD CARRIERS;
DRIVE CURRENTS;
FIELD-EFFECT TRANSISTOR;
HIGH-POWER ELECTRONIC DEVICES;
HIGH-SPEED;
INP;
MATERIAL CHOICE;
PERFORMANCE ANALYSIS;
THEORETICAL INVESTIGATIONS;
TUNNELING CURRENT;
WAVE VECTOR;
ELECTRIC FIELDS;
ELECTRIC POWER SYSTEMS;
ELECTRIC WIRE;
LEAKAGE CURRENTS;
MESFET DEVICES;
NANOWIRES;
TUNNELING (EXCAVATION);
WIND TUNNELS;
FIELD EFFECT TRANSISTORS;
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EID: 69249192691
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3212892 Document Type: Article |
Times cited : (9)
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References (12)
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