Performance of n-type InSb and InAs nanowire field-effect transistors

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2939-2945

  Khayer, M Abul ^a   Lake, Roger K ^a  

^a University of California Riverside   (United States)

Author keywords

Bandstructure; Effective mass; InAs nanowire field effect transistors (NWFETs); InSb NWFETs; k p method; NWs

Indexed keywords

CUTOFF FREQUENCY; ELECTRONIC STRUCTURE; INDIUM ARSENIDE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING INDIUM; TRANSISTORS;

BANDSTRUCTURE; EFFECTIVE MASS; INAS NANOWIRE FIELD-EFFECT TRANSISTORS (NWFETS); INSB NWFETS; NWS;

FIELD EFFECT TRANSISTORS;

EID: 56549110429     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005173     Document Type: Article

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