Simulation of piezoresistivity in n -type single-crystal silicon on the basis of the first-principles band structure

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 4, 2009, Pages

  Nakamura, Koichi ^a   Isono, Yoshitada ^b   Toriyama, Toshiyuki ^a   Sugiyama, Susumu ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b KOBE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 69949160870     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.045205     Document Type: Article

References (50)

1. C. S. Smith, Phys. Rev. 94, 42 (1954). 10.1103/PhysRev.94.42
2. F. H. Pollak and M. Cardona, Phys. Rev. 172, 816 (1968). 10.1103/PhysRev.172.816
3. L. D. Laude, F. H. Pollak, and M. Cardona, Phys. Rev. B 3, 2623 (1971). 10.1103/PhysRevB.3.2623
4. J. F. Creemer and P. J. French, J. Appl. Phys. 96, 4530 (2004). 10.1063/1.1789269
5. O. N. Tufte and E. L. Stezler, Phys. Rev. 133, A1705 (1964). 10.1103/PhysRev.133.A1705
6. O. N. Tufte and E. L. Stezler, J. Appl. Phys. 34, 313 (1963). 10.1063/1.1702605
7. O. N. Tufte, P. W. Chapman, and D. Long, J. Appl. Phys. 33, 3322 (1962). 10.1063/1.1931164
8. K. Yamada, M. Nishihara, S. Shimada, M. Tanabe, M. Shimazoe, and Y. Matsuoka, IEEE Trans. Electron Devices 29, 71 (1982). 10.1109/T-ED.1982.20660
9. B. Borchert and G. E. Dorda, IEEE Trans. Electron Devices 35, 483 (1988). 10.1109/16.2482
10. A. T. Bradley, R. C. Jaeger, J. C. Suhling, and K. J. O'Connor, IEEE Trans. Electron Devices 48, 2009 (2001). 10.1109/16.944190
11. M. L. Lee and E. A. Fitzgerald, J. Appl. Phys. 94, 2590 (2003). 10.1063/1.1590052
12. T. Toriyama and S. Sugiyama, Sens. Actuators, A 108, 244 (2003). 10.1016/S0924-4247(03)00269-3
13. W. Zhao, J. He, R. E. Belford, L.-E. Wernersson, and A. Seabaugh, IEEE Trans. Electron Devices 51, 317 (2004). 10.1109/TED.2003.823048
14. S. E. Thompson, G. Sun, Y. S. Choi, and T. Nishida, IEEE Trans. Electron Devices 53, 1010 (2006). 10.1109/TED.2006.872088
15. R. W. Keyes, Solid State Phys. 11, 149 (1960). 10.1016/S0081-1947(08) 60168-X
16. C. Herring, Bell Syst. Tech. J. 34, 237 (1955).
17. C. Herring and E. Vogt, Phys. Rev. 101, 944 (1956). 10.1103/PhysRev.101. 944
18. I. Balslev, Phys. Rev. 143, 636 (1966). 10.1103/PhysRev.143.636
19. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986). 10.1103/PhysRevB.34.5621
20. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996). 10.1063/1.363052
21. H. Hasegawa, Phys. Rev. 129, 1029 (1963). 10.1103/PhysRev.129.1029
22. S. Richard, F. Aniel, G. Fishman, and N. Cavassilas, J. Appl. Phys. 94, 1795 (2003). 10.1063/1.1587004
23. W. G. Pfann and R. N. Thurston, J. Appl. Phys. 32, 2008 (1961). 10.1063/1.1728280
24. Y. Kanda, IEEE Trans. Electron Devices 29, 64 (1982). 10.1109/T-ED.1982.20659
25. Y. Kanda and K. Suzuki, Phys. Rev. B 43, 6754 (1991). 10.1103/PhysRevB.43.6754
26. Y. Kanda, Sens. Actuators, A 28, 83 (1991). 10.1016/0924-4247(91)85017-I
27. K. Nakamura, Y. Isono, and T. Toriyama, Jpn. J. Appl. Phys. 47, 5132 (2008). 10.1143/JJAP.47.5132
28. K. Nakamura, Y. Isono, T. Toriyama, and S. Sugiyama, Jpn. J. Appl. Phys. 48, 06FG09 (2009).
29. Y. Kanda, Sens. Actuators 4, 199 (1983). 10.1016/0250-6874(83)85025-2
30. Y. Kanda, Jpn. J. Appl. Phys. 26, 1031 (1987). 10.1143/JJAP.26.1031
31. K. Matsuda, K. Suzuki, K. Yamamura, and Y. Kanda, J. Appl. Phys. 73, 1838 (1993). 10.1063/1.353169
32. M. Bao and Y. Wang, Sens. Actuators 12, 49 (1987). 10.1016/0250-6874(87) 87005-1
33. Y. Ohmura, Phys. Rev. B 42, 9178 (1990). 10.1103/PhysRevB.42.9178
34. P. Kleimann, B. Semmache, M. Le Berre, and D. Barbier, Phys. Rev. B 57, 8966 (1998). 10.1103/PhysRevB.57.8966
35. E. X. Wang, P. Matagne, L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, M. Stettler, and M. D. Giles, IEEE Trans. Electron Devices 53, 1840 (2006). 10.1109/TED.2006.877370
36. K. Seeger, Semiconductor Physics, An Introduction, 6th ed. (Springer-Verlag, Heidelberg, 1989), pp. 10-33.
37. M. Bockstedte, A. Kley, J. Neugebauer, and M. Scheffler, Comput. Phys. Commun. 107, 187 (1997). 10.1016/S0010-4655(97)00117-3
38. P. Hohenberg and W. Kohn, Phys. Rev. 136, B864 (1964). 10.1103/PhysRev.136.B864
39. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
40. D. R. Hamann, Phys. Rev. B 40, 2980 (1989). 10.1103/PhysRevB.40.2980
41. G. Dresselhaus, A. F. Kip, and C. Kittel, Phys. Rev. 98, 368 (1955). 10.1103/PhysRev.98.368
42. S. Zwerdling, K. J. Button, B. Lax, and L. M. Roth, Phys. Rev. Lett. 4, 173 (1960). 10.1103/PhysRevLett.4.173
43. C. Kittel, Introduction to Solid State Physics, 8th ed. (Wiley, New York, 2005), p. 200.
44. C. Kittel, Introduction to Solid State Physics, 8th ed. (Wiley, New York, 2005), p. 177.
45. J. M. Ziman, Principle of the Theory of Solids, 2nd ed. (Cambridge University Press, New York, 1972), pp. 183-186.
46. T. Kinoshita, K. M. Itoh, M. Schadt, and G. Pensl, J. Appl. Phys. 85, 8193 (1999). 10.1063/1.370659
47. S. Jin, Y. J. Park, and H. S. Min, J. Appl. Phys. 99, 123719 (2006). 10.1063/1.2206885
48. T. Markussen, R. Rurali, M. Brandbyge, and A.-P. Jauho, Phys. Rev. B 74, 245313 (2006). 10.1103/PhysRevB.74.245313
49. F. B. Hildebrand, Introduction to Numerical Analysis (McGraw- Hill, New York, 1956), pp. 323-325.
50. Y. P. Varshni, Phys. Rev. B 2, 3952 (1970). 10.1103/PhysRevB.2.3952