Silicon nanowire n -type metal-oxide-semiconductor field-effect transistors and single-electron transistors at room temperature under uniaxial tensile strain

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Jeong, Yeonjoo ^a   Miyaji, Kousuke ^a   Saraya, Takuya ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; POTENTIAL STRUCTURES; ROOM TEMPERATURES; SILICON NANOWIRES; SINGLE-ELECTRON TRANSISTORS; STRAIN EFFECTS; TRANSVERSE TENSILE; UNIAXIAL TENSILE STRAINS;

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; ION BEAMS; MOSFET DEVICES; NANOWIRES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; TRANSIENTS;

TENSILE STRAIN;

EID: 65449167884     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3115448     Document Type: Article

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