Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 12, 2010, Pages

  Boykin, Timothy B ^a   Luisier, Mathieu ^b   Salmani Jelodar, Mehdi ^b   Klimeck, Gerhard ^b  

^a UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

^b Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77955134200     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.125202     Document Type: Article

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