Computational study on the performance of Si nanowire pMOSFETs based on the k · p method

IEEE Transactions on Electron Devices

Volumn 57, Issue 9, 2010, Pages 2274-2283

  Shin, Mincheol ^a   Lee, Sunhee ^b   Klimeck, Gerhard ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Hole; k p; MOSFET; nanowire; nonequilibrium Green's function; PMOS; simulation; spin orbit coupling; tight binding; transistors; transport; valence band

Indexed keywords

HOLE; MOS-FET; NON-EQUILIBRIUM GREEN'S FUNCTION; PMOS; SIMULATION; SPIN-ORBIT COUPLINGS; TIGHT BINDING; TRANSPORT;

GREEN'S FUNCTION; MOSFET DEVICES; NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 77956062060     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2052400     Document Type: Article

References (21)

1. Y. Cui, Z. Zhong, D. Wang, W. Wang, and C. Lieber, "High performance silicon nanowire field effect transistors," Nano Lett., vol.3, no.2, pp. 149- 152, 2003.
2. N. Singh, F. Y. Lim, W. W. Fang, S. C. Rustagi, L. K. Bera, A. Agarwal, C. H. Tung, K. M. Hoe, S. R. Omampuliyur, D. Tripathi, A. O. Adeyeye1, G. Q. Lo, N. Balasubramanian, and D. L. Kwong, "Ultra-narrow silicon nanowire gate-all-around CMOS devices: Impact of diameter, channelorientation and low temperature on device performance," in IEDM Tech. Dig., 2006, pp. 1-4.
3. K. H. Cho, K. H. Yeo, Y. Y. Yeoh, S. D. Suk, M. Li, J. M. Lee, M.-S. Kim, D.-W. Kim, D. Park, B. H. Hong, Y. C. Jung, and S. W. Hwang, "Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., vol.92, no.5, pp. 052 102-1- 052 102-3, 2008.
4. M. Kobayashi and T. Hiramoto, "Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors," J. Appl. Phys., vol.103, no.5, pp. 053 709-1-053 709-6, 2008.
5. J. Wang, A. Rahman, A. Ghosh, G. Klimeck, and M. Lundstrom, "Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations," Appl. Phys. Lett., vol.86, no.9, pp. 093 113-1-093 113-3, 2005.
6. N. Neophytou, A. Paul, and G. Klimeck, "Bandstructure effects in silicon nanowire hole transport," IEEE Trans. Nanotechnol., vol.7, no.6, pp. 710-719, Nov. 2008.
7. N. Neophytou and G. Klimeck, "Design space for low sensitivity to size variations in [110] PMOS nanowire devices: The implications of anisotropy in the quantization mass," Nano Lett., vol.9, no.2, pp. 623- 630, Jan. 2009.
8. M. Luisier and A. Schenk, "Atomistic simulation of nanowire transistors," J. Comput. Theor. Nanosci., vol.5, no.6, pp. 1031-1045, Jun. 2008.
9. A. Rahman, J. Guo, S. Datta, and M. S. Lundstrom, "Theory of ballistic nanotransistors," IEEE Trans. Electron Devices, vol.50, no.9, pp. 1853- 1864, Sep. 2003.
10. A. Paul, M. Luisier, N. Neophytou, R. Kim, M. McLennan, M. Lundstrom, and G. Klimeck, Band Structure Lab, 2006, DOI: 10254/ nanohub-r1308.12. [Online]. Available: https://www.nanohub.org/tools/ bandstrlab
11. A. Paul, S. Mehrotra, M. Luisier, and G. Klimeck, "On the validity of the top of the barrier quantum transport model for ballistic nanowire MOSFETs," in Proc. 13th Int. Workshop Comput. Electron., May 2009, pp. 1-4.
12. M. Shin, "Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k • p method," J. Appl. Phys., vol.106, no.5, pp. 054 505-1-054 505-10, 2009.
13. M. Shin, KP Nanowire/UTB FET, 2009, DOI: 10254/nanohub-r6510.2. [Online]. Available: https://www.nanohub.org/tools/kpnanofet
14. E. Kane, "Energy band structure in p-type germanium and silicon," J. Phys. Chem. Solids, vol. 1, no. 1/2, pp. 82-99, 1956.
15. P. Enders andM.Woerner, "Eight-band k • p Hamilton matrix for strained tetrahedral semiconductors : 4 × 4 block diagonalization for symmetric k-directions," Phys. Stat. Sol.(B), vol.194, no.2, pp. 585-599, 1996.
16. M. El kurdi, G. Fishman, S. Sauvage, and P. Boucaud, "Comparison between 6-band and 14-band k • p formalisms in SiGe/Si heterostructures, " Phys. Rev. B, Condens. Matter, vol.68, no.16, pp. 165 333-1-165 333-16, 2003.
17. S. Kim, M. Luisier, B. P. Haley, A. Paul, S. R. Mehrotra, and G. Klimeck, OMEN Nanowire, 2008, DOI: 10254/nanohub-r5359.6. [Online]. Available: https://www.nanohub.org/tools/omenwire
18. R. Enderlein and N. J. M. Horing, Fundamentals of Semiconductor Physics and Devices. Singapore: World Scientific, 1997.
19. J. Wang, E. Polizzi, and M. Lundstrom, "A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation," J. Appl. Phys., vol.96, no.4, pp. 2192-2203, Aug. 2004.
20. M. Shin, "Computational Study on the performance of multiple-gate nanowire Schottky-Barrier MOSFETs," IEEE Trans. Electron Devices, vol.55, no.3, pp. 737-742, Mar. 2008.
21. M. Shin, "Efficient simulation of silicon nanowire field effect transistors and their scaling behavior," J. Appl. Phys., vol.101, no.2, pp. 024 510-1- 024 510-6, 2007.