Band structure effects on the current-voltage characteristics of SNW-FETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 737-740

  Gnani, Elena ^a   Gnudi, Antonio ^a   Reggiani, Susanna ^a   Rudan, Massimo ^a   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC WIRE; ELECTRON DEVICES; MESFET DEVICES; NANOSTRUCTURED MATERIALS; NONMETALS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

AVERAGE VELOCITY; BAND STRUCTURE EFFECTS; FINITE ENERGY; NEW APPROACHES; OUTPUT CONDUCTANCE; QUANTUM TRANSPORTS; SHORT CHANNELS; SILICON-NANOWIRE; SUB-BANDS; SUBTHRESHOLD SLOPES; TRANSIT TIME;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 50249117107     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419052     Document Type: Conference Paper

References (6)

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4. F. Gomez-Campos et al., J. Appl. Phys., 98, 033717, 2005.
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6. Y. Zheng et al., IEEE Tran. on ED, 52, p. 1097,2005.