Electron mobility and short-channel device characteristics of SOI FinFETs with uniaxially strained (110) channels

IEEE Transactions on Electron Devices

Volumn 56, Issue 8, 2009, Pages 1651-1658

  Irisawa, Toshifumi ^a,b   Okano, Kimitoshi ^c   Horiuchi, Takuya ^c   Itokawa, Hiroshi ^c   Mizushima, Ichiro ^c   Usuda, Koji ^a,c   Tezuka, Tsutomu ^a,c   Sugiyama, Naoharu ^a,c   Takagi, Shin Ichi ^a,d  

^a National Institute of Advanced Industrial Science and Technology   (Japan)

^b STANFORD UNIVERSITY   (United States)

^c TOSHIBA CORPORATION   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

(110); FinFETs; Mobility enhancement; SOI; Strained Si; Uniaxial strain,

Indexed keywords

(110); FINFETS; MOBILITY ENHANCEMENT; SOI; STRAINED SI; UNIAXIAL STRAIN,;

CRYSTAL GROWTH; ELECTRON MOBILITY; ELECTRONS; LANDFORMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE ROUGHNESS;

TENSILE STRAIN;

EID: 68349157651     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2024029     Document Type: Article

References (15)

1. T. Irisawa, T. Numata, T. Tezuka, N. Sugiyama, and S. Takagi, "Electron transport properties of ultrathin-body and tri-gate SOI nMOSFETs with biaxial and uniaxial strain," in IEDM Tech. Dig., 2006, pp. 457-460.
2. T. Irisawa, T. Numata, T. Tezuka, N. Sugiyama, and S. Takagi, "Device design and electron transport properties of uniaxially strained-SOI tri-gate nMOSFETs," IEEE Trans. Electron Devices, vol. 55, no. 2, pp. 649-654, Feb. 2008.
3. N. Collaert, R. Rooyackers, F. Clemente, P. Zimmerman, I. Cayrefourcq, B. Ghyselen, K. T. San, N. Eyckens, M. Jurczak, and S. Biesemans, "Performance enhancement of MUGFET devices using super critical strained-SOI (SC-SSOI) and CESL," in VLSI Symp. Tech. Dig., 2006, pp. 52-53.
4. W. Xiong, C. R. Cleavelin, P. Kohli, C. Huffman, T. Schulz, K. Schruefer, G. Gebara, K. Mathews, P. Patruno, Y.-M. Le Vaillant, I. Cayrefourcq, M. Kennard, C. Mazure, K. Shin, and T.-J. King Liu, "Impact of strained-silicon-on-insulator (sSOI) substrate on FinFET mobility," IEEE Electron Device Lett., vol. 27, no. 7, pp. 612-614, Jul. 2006.
5. K. Uchida, A. Kinoshita, and M. Saitoh, "Carrier transport in (110) nMOSFETs: Subband structure, non-parabolicity, mobility characteristics, and uniaxial stress engineering," in IEDM Tech. Dig., 2006, pp. 1019-1021.
6. A. Kaneko, A. Yagishita, K. Yahashi, T. Kubota, M. Omura, K. Matsuo, I. Mizushima, K. Okano, H. Kawasaki, T. Izumida, T. Kanemura, N. Aoki, A. Kinoshita, J. Koga, S. Inaba, K. Ishimaru, Y. Toyoshima, H. Ishiuchi, K. Suguro, K. Eguchi, and Y. Tsunashima, "High-performance FinFET with dopant-segregated Schottky source/drain," in IEDM Tech. Dig., 2006, pp. 893-896.
7. T. Irisawa, K. Okano, T. Horiuchi, H. Itokawa, I. Mizushima, K. Usuda, T. Tezuka, N. Sugiyama, and S. Takagi, "High electron mobility enhancement on (110) surface due to uniaxial strain and its impact on short channel device performance of SOI FinFETs," in Proc. IEEE Si Nanoelectronics Workshop, 2008, p. S0 930.
8. K. Usuda, T. Irisawa, T. Numata, N. Hirashita, and S. Takagi, "Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) method," Semicond. Sci. Technol., vol. 22, no. 1, pp. S227-S230, Dec. 2006.
9. K. Uchida, T. Krishnamohan, K. C. Saraswat, and Y. Nishi, "Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime," in IEDM Tech. Dig., 2005, pp. 135-138.
10. O. Bonno, S. Barraud, F. Andrieu, D. Mariolle, F. Rochette, M. Casse, J. M. Hartmann, F. Bertin, and O. Faynot, "High-field electron mobility in biaxially-tensile strained SOI: Low temperature measurement and correlation with the surface morphology," in VLSI Symp. Tech. Dig. 2007, pp. 134-135.
11. S. E. Thompson, G. Sun, Y. S. Choi, and T. Nishida, "Uniaxial-process-induced strained-Si: Extending the CMOS roadmap," IEEE Trans. Electron Devices, vol. 53, no. 5, pp. 1010-1020, May 2006.
12. T. Irisawa, T. Numata, T. Tezuka, K. Usuda, S. Nakaharai, N. Hirashita, N. Sugiyama, E. Toyoda, and S. Takagi, "High-performance multi-gate pMOSFETs using uniaxially-strained SGOI channels," in IEDM Tech. Dig., 2005, pp. 725-728.
13. T. Tezuka, N. Hirashita, Y. Moriyama, S. Nakaharai, N. Sugiyama, and S. Takagi, "Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process," Appl. Phys. Lett., vol. 90, no. 18, pp. 181 918-1-181 918-3, Apr. 2007.
14. S. Y. Chou and D. A. Antoniadis, "Relationship between measured and intrinsic transconductances of FETs," IEEE Trans. Electron Devices vol. ED-34, no. 2, pp. 448-450, Feb. 1987.
15. R. Ohba and T. Mizuno, "Nonstationary electron/hole transport in sub-0.1 μm MOS devices: Correlation with mobility and low-power CMOS applications," IEEE Trans. Electron Devices, vol. 48, no. 2, pp. 338-343, Feb. 2001.