Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

Nanotechnology

Volumn 22, Issue 45, 2011, Pages

  Wu, Xing ^a,b   Pey, Kin Leong ^a,b   Raghavan, Nagarajan ^a   Liu, Wen Hu ^a   Li, Xiang ^c   Bai, Ping ^d   Zhang, Gang ^e   Bosman, Michel ^f  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^e PEKING UNIVERSITY   (China)

^f INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION STUDIES; FILAMENTATION; GATE METALS; GATE STACKS; METAL FILAMENTS; METAL INSULATOR METALS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MIS STRUCTURE; NON-VOLATILE MEMORIES; PHYSICS OF FAILURES; RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS;

GATE DIELECTRICS; GATES (TRANSISTOR); LOGIC GATES; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; OXYGEN VACANCIES; RANDOM ACCESS STORAGE; SEMICONDUCTOR INSULATOR BOUNDARIES; SWITCHING CIRCUITS; SWITCHING SYSTEMS;

MIM DEVICES;

EID: 80054897285     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/45/455702     Document Type: Article

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