The physical origin of random telegraph noise after dielectric breakdown

Applied Physics Letters

Volumn 94, Issue 13, 2009, Pages

  Li, X ^a,b   Tung, C H ^b   Pey, K L ^a   Lo, V L ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT LEVELS; DEFECTIVE OXIDES; DIELECTRIC BREAKDOWNS; DIGITAL NOISE; INNER SHELLS; LEAKAGE STATE; LOW OXYGENS; NANO SIZES; OUTER SHELLS; PERCOLATION PATHS; PROGRESSIVE BREAKDOWNS; RANDOM SWITCHING; RANDOM TELEGRAPH NOISE; TELEGRAPH NOISE;

OXYGEN; SOLVENTS; TELEGRAPH; THERMAL NOISE;

PERCOLATION (FLUIDS);

EID: 64149110849     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3114410     Document Type: Article

References (17)

1. T. Ishida, N. Tega, Y. Mori, H. Miki, T. Mine, H. Kume, K. Torii, M. Muraguchi, Y. Takada, K. Shiraishi, and R. Yamada, Proceedings of the 46th International Reliability Physics Symposium, 2008, p. 604.
2. N. Tega, H. Miki, M. Yamaoka, H. Kume, T. Mine, T. Ishida, Y. Mori, R. Yamada, and K. Torii, Proceedings of the 46th International Reliability Physics Symposium, 2008, p. 541.
3. A. Ghetti, M. Bonanomi, C. Monzio Compagnoni, A. S. Spinelli, A. L. Lacaita, and A. Visconti, Proceedings of the 46th International Reliability Physics Symposium, 2008, p. 610.
4. V. L. Lo, K. L. Pey, C. H. Tung, and D. S. Ang, Proceedings of the 45th International Reliability Physics Symposium, 2007, p. 576.
5. V. L. Lo, K. L. Pey, C. H. Tung, and X. Li, Tech. Dig.-Int. Electron Devices Meet. 2007, 497.
6. B. Kaczer, R. Degraeve, A. D. Keersgieter, K. V. de Mieroop, V. Simons, and G. Groeseneken, IEEE Trans. Electron Devices 0018-9383 10.1109/16.987123 49, 507 (2002).
7. X. Li, C. H. Tung, and K. L. Pey, Appl. Phys. Lett. 0003-6951 10.1063/1.3056659 93, 262902 (2008).
8. J. Aizpurua, A. Howie, and F. J. García de Abajo, Phys. Rev. B 0163-1829 10.1103/PhysRevB.60.11149 60, 11149 (1999).
9. V. L. Lo, K. L. Pey, C. H. Tung, D. S. Ang, T. S. Foo, and L. J. Tang, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.873422 27, 396 (2006).
10. P. M. Lenahan, J. J. Mele, J. P. Campbell, A. Y. Kang, R. K. Lowry, D. Woodbury, S. T. Liu, and R. Weimer, Proceedings of the 39th International Reliability Physics Symposium, 2001, p. 150.
11. E. Wu, S. Tous, and J. Sú, Tech. Dig.-Int. Electron Devices Meet. 2007, 493.
12. E. Wu and J. Sú, Proceedings of the 44th International Reliability Physics Symposium, 2006, p. 54.
13. F. Monsieur, E. Vincent, D. Roy, S. Bruyere, J. C. Vildeuil, G. Pananakakis, and G. Ghibaudo, Proceedings of the 40th International Reliability Physics Symposium, 2002, p. 45.
14. J. S. Suehle, B. Zhu, and J. B. Bernstein, Proceedings of the 42th International Reliability Physics Symposium, 2004, p. 95.
15. J. W. McPherson, J. Appl. Phys. 0021-8979 10.1063/1.2189930 99, 083501 (2006).
16. J. W. McPherson, Proceedings of the 45th International Reliability Physics Symposium, 2007, p. 209.
17. P. E. Blöchl and J. H. Stathis, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.83.372 83, 372 (1999).