Resistive switching in NiSi gate metal-oxide-semiconductor transistors

Applied Physics Letters

Volumn 97, Issue 20, 2010, Pages

  Li, X ^a,b   Liu, W H ^b   Raghavan, N ^b   Bosman, M ^c   Pey, K L ^b,d  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GATE METALS; GATE TRANSISTORS; MEMORY CELL; METAL GATE TRANSISTORS; NANO SCALE; OXYGEN-ION CONDUCTION; PERCOLATION PATH; PHYSICAL DEFECTS; RESISTIVE SWITCHING;

GATE DIELECTRICS; GATES (TRANSISTOR); OXYGEN; SOLVENTS; SWITCHING SYSTEMS;

TRANSISTORS;

EID: 78649276205     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3516466     Document Type: Article

References (18)

1. J. J. Yang, M. D. Pickett, X. M. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol. 1748-3387 3, 429 (2008). 10.1038/nnano.2008. 160
2. H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. -J. Tsai, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2008, 297.
3. M. Tada, T. Sakamoto, Y. Tsuji, N. Banno, Y. Saito, Y. Yabe, S. Ishida, M. Terai, S. Kotsuji, N. Iguchi, M. Aono, H. Hada, and N. Kasai, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2009, 943.
4. H. Y. Lee, Y. S. Chen, P. S. Chen, T. Y. Wu, F. Chen, C. C. Wang, P. J. Tzeng, M. -J. Tsai, and C. Lien, IEEE Electron Device Lett. 0741-3106 31, 44 (2010). 10.1109/LED.2009.2034670
5. H. Schroeder, V. V. Zhirnov, R. K. Cavin, and R. Waser, J. Appl. Phys. 0021-8979 107, 054517 (2010). 10.1063/1.3319591
6. Ch. Walczyk, Ch. Wenger, R. Sohal, M. Lukosius, A. Fox, J. Dbrowski, D. Wolansky, B. Tillack, H. J. Müssig, and T. Schroeder, J. Appl. Phys. 0021-8979 105, 114103 (2009). 10.1063/1.3139282
7. H. W. Zhang, B. Gao, B. Sun, G. P. Chen, L. Zeng, L. F. Liu, X. Y. Liu, J. Lu, R. Q. Han, J. F. Kang, and B. Yu, Appl. Phys. Lett. 0003-6951 96, 123502 (2010). 10.1063/1.3364130
8. C. Y. Lin, C. Y. Wu, C. Y. Wu, T. C. Lee, F. L. Yang, C. M. Hu, and T. Y. Tseng, IEEE Electron Device Lett. 0741-3106 28, 366 (2007). 10.1109/LED.2007.894652 (Pubitemid 46667430)
9. Q. Liu, S. B. Long, W. Wang, Q. Y. Zuo, S. Zhang, J. N. Chen, and M. Liu, IEEE Electron Device Lett. 0741-3106 30, 1335 (2009). 10.1109/LED.2009.2032566
10. B. Lee and H. -S. Philip Wong, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2009, 28.
11. L. J. Zhang, R. Huang, D. J. Gao, D. K. Wu, Y. B. Kuang, P. R. Tang, W. Ding, A. Z. H. Wang, and Y. Y. Wang, IEEE Electron Device Lett. 0741-3106 30, 870 (2009). 10.1109/LED.2009.2024650
12. W. H. Liu, K. L. Pey, X. Li, and M. Bosman, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2009, 135.
13. X. Wu, K. L. Pey, G. Zhang, P. Bai, X. Li, W. H. Liu, and N. Raghavan, Appl. Phys. Lett. 0003-6951 96, 202903 (2010). 10.1063/1.3429682
14. B. Kaczer, R. Degraeve, A. D. Keersgieter, K. V. de Mieroop, V. Simons, and G. Groeseneken, IEEE Trans. Electron Devices 0018-9383 49, 507 (2002). 10.1109/16.987123 (Pubitemid 34404850)
15. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices 0018-9383 56, 193 (2009). 10.1109/TED.2008.2010584
16. L. J. Tang, K. L. Pey, C. H. Tung, M. K. Radhakrishnan, and W. H. Lin, IEEE Trans. Device Mater. Reliab. 1530-4388 4, 38 (2004). 10.1109/TDMR.2004. 824374
17. X. Li, C. H. Tung, and K. L. Pey, Appl. Phys. Lett. 0003-6951 93, 072903 (2008). 10.1063/1.2974792
18. N. Raghavan, W. H. Liu, X. Li, X. Wu, M. Bosman, and K. L. Pey, " Filamentation Mechanism of Resistive switching in fully silicided High-κ Gate Stacks. " (unpublished).