A critical gate voltage triggering irreversible gate dielectric degradation

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 576-577

  Lo, V L ^a   Pey, K L ^a   Tung, C H ^b   Ang, D S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; THICKNESS MEASUREMENT;

CRITICAL GATE VOLTAGE; GATE VOLTAGE; OPERATING VOLTAGES;

DIELECTRIC DEVICES;

EID: 34548804436     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369958     Document Type: Conference Paper

References (9)

1. S. Lombardo et al., PRL, 90, 2003, pp. 167601.
2. V. L. Lo et al., IEEE EDL, 27, 2006, pp. 396.
3. T. Selvarajoo et al., IEEE TDMR, 5, 2005, pp. 190.
4. R. Degraeve et al., Tech. Dig. IEDM 2005.
5. V. L. Lo et al., IEEE Proc. IRPS 2005, pp. 602.
6. R. Degraeve et al., IEEE Proc. IRPS 2001, pp. 360.
7. A. J. Lelis et al., IEEE TNS, 1989, pp. 1808.
8. K. Kobayashi et al., JAP, 77, 1995, pp. 3277.
9. V. L. Lo et al., IEEE Proc. IRPS 2006, pp. 619.