Substrate injection induced ultrafast degradation in HfO 2/TaN/TiN gate stack MOSFET

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Ranjan, R ^a,b   Pey, K L ^a   Tung, C H ^b   Ang, D S ^a   Tang, L J ^b   Kauerauf, T ^c,d   Degraeve, R ^c   Groeseneken, G ^c,d   De Gendt, S ^c,d   Bera, L K ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; SULFATE MINERALS;

INTERNATIONAL (CO); SUBSTRATE INJECTION; ULTRA-FAST;

ELECTRON DEVICES;

EID: 46149096945     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346897     Document Type: Conference Paper

References (16)

1. T. Kauerauf et al., EDL 26, 2005, p. 773.
2. R. Ranjan et al., APL 88, 2006, p. 122907.
3. R. Ranjan et al., IRPS. 2006, p.590.
4. R. Degraeve et al., IEDM,2005.
5. R. Ranjan et al., IRPS, 2004, p.347.
6. R. Ranjan et al., IEDM, 2004, p.725.
7. V. Aubry et al., JAP, 1994, p.7973.
8. R.T. Tung et al., PRL 66, 1991, p. 72.
9. R. Degraeve et al., IRPS,2001, p.360.
10. V.L. Lo et.al., IRPS, 2006, p.619.
11. J. Sune et al., IEDM, 2000, p.533.
12. R. Degraeve et al., IEDM. 1995, p.863.
13. M. V. Fischetti et al., Physical Review B, 1985, p.2099.
14. J.-H. Kim et al., JAP, 1998, p.1430.
15. J.P. Dekker et al., JAP, 1998, p.1958.
16. A. Lodder et al., Euro Phys. Letters 72, 2005, p.774.