Observation of switching behaviors in post-breakdown conduction in NiSi-gated stacks

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Liu, W H ^a   Pey, K L ^a   Li, X ^a,b   Bosman, M ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

E-FIELD; FAVORABLE CONDITIONS; GATE TRANSISTORS; MATERIAL SYSTEMS; NANO SCALE; OXYGEN ATOM; PERCOLATION MODELS; REVERSE BIAS; SI DANGLING BONDS; SWITCHING BEHAVIORS;

DANGLING BONDS; ELECTRON DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); OXYGEN; PASSIVATION; SOLVENTS; SWITCHING;

MATHEMATICAL MODELS;

EID: 77952380696     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424402     Document Type: Conference Paper

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