Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETs

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 1, 2004, Pages 38-45

  Tang, Lei Jun ^a,b   Pey, Kin Leong ^b   Tung, Chih Hang ^a   Radhakrishnan, M K ^c   Lin, Wen He ^d  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Breakdown; Dielectric breakdown induced epitaxy; Gate dielectrics; Gate oxide; MOSFET

Indexed keywords

DIELECTRIC BREAKDOWN INDUCED EPITAXY; GATE OXIDE; HARD BREAKDOWNS (HBD);

CRYSTALLIZATION; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); ION BEAMS; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY;

MOSFET DEVICES;

EID: 2342625952     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.824374     Document Type: Conference Paper

References (11)

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